elektronische bauelemente ssd20n10-130d 17a , 90v , r ds(on) 130m ? n-ch enhancement mode power mosfet 15-jun-2012 rev. b page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. a c d n o p g e f h k j m b to-252(d-pack) rohs compliant product a suffix of ?-c? specifies halogen free description these miniature surface mount mosfet utilize a high cell density trench process to provide low r ds(on) and to ensure minimal power loss and heat dissipation. features ? low r ds(on) provides higher efficiency and extends battery life ? low thermal impedance copper leadframe to-252 saves board space ? fast switching speed ? high performance trench technology application dc-dc converters and power management in portable and battery-powered products such as computers, printers, pcmcia cards, cellular and cordless telephones. package information package mpq leader size to-252 2.5k 13 inch absolute maximum ratings (t a =25c unless otherwise specified) parameter symbol rating unit drain-source voltage v ds 90 v gate-source voltage v gs 20 v continuous drain current 1 t a =25c i d 17 a pulsed drain current 2 i dm 70 a continuous source current (diode conduction) 1 i s 42 a total power dissipation 1 t a =25c p d 50 w operating junction and st orage temperature range t j , t stg -55~175 c thermal resistance rating maximum thermal resistance junction-ambient 1 r ja 40 c / w maximum thermal resistance junction-case r jc 3 c / w note: 1. surface mounted on 1? x 1? fr4 board. 2. pulse width limited by maximum junction temperature ? ? gate ? ? source ? ? drain millimete r millimete r ref. min. max. ref. min. max. a 6.35 6.80 j 2.30 ref. b 5.20 5.50 k 0.64 0.90 c 2.15 2.40 m 0.50 1.1 d 0.45 0.58 n 0.9 1.65 e 6.8 7.5 o 0 0.15 f 2.40 3.0 p 0.43 0.58 g 5.40 6.25 h 0.64 1.20
elektronische bauelemente ssd20n10-130d 17a , 90v , r ds(on) 130m ? n-ch enhancement mode power mosfet 15-jun-2012 rev. b page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. electrical characteristics (t a =25 c unless otherwise specified) parameter symbol min. typ. max. unit teat conditions static gate-threshold voltage v gs(th) 1.0 - - v v ds =v gs, i d =250 a gate-body leakage i gss - - 100 na v ds =0, v gs =20v - - 1 v ds =80v, v gs =0 zero gate voltage drain current i dss - - 25 a v ds =80v, v gs =0, t j =55c on-state drain current 1 i d(on) 30 - - a v ds =5v, v gs =10v - - 130 v gs =10v, i d =8.5a drain-source on-resistance 1 r ds(on) - - 160 m ? v gs =4.5v, i d =7.5a forward transconductance 1 g fs - 15 - s v ds =15v, i d =8.5a diode forward voltage v sd - 1.03 - v i s =21a, v gs =0 dynamic 2 input capacitance c iss - 398 - output capacitance c oss - 43 - reverse transfer capacitance c rss - 34 - pf v gs =0 v ds =15v f =1.0mhz total gate charge q g - 4.9 - gate-source charge q gs - 1.9 - gate-drain charge q gd - 2.3 - nc v ds =50v v gs =4.5v i d =8.5a turn-on delay time t d(on) - 4 - rise time t r - 6 - turn-off delay time t d(off) - 19 - fall time t f - 7 - ns v ds =50v i d =8.5a v gen =10v r l =3.7 ? r gen =6 ? notes: 1. pulse test pulse width Q 300 s, duty cycle Q 2 . 2. guaranteed by design, not subject to production testing.
elektronische bauelemente ssd20n10-130d 17a , 90v , r ds(on) 130m ? n-ch enhancement mode power mosfet 15-jun-2012 rev. b page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves
elektronische bauelemente ssd20n10-130d 17a , 90v , r ds(on) 130m ? n-ch enhancement mode power mosfet 15-jun-2012 rev. b page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves
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